byv26dgp & byv26egp document number 88554 10-aug-05 vishay general semiconductor www.vishay.com 1 p a t e n t e d * do-204ac (do-15) ? * glass encapsulation technique is covered by patent no. 3,996,602, brazed-lead assembly to patent no. 3,930,306 glass passivated ultrafast rectifier major ratings and characteristics i f(av) 1.0 a v rrm 800 v, 1000 v i fsm 30 a t rr 75 ns v f 1.3 v t j max. 175 c features cavity-free glass-passivated junction ultrafast reverse recovery time low forward voltage drop low switching losse s, high efficiency high forward surge capability meets environmental standard mil-s-19500 solder dip 260 c, 40 seconds typical applications for use in high frequency rectification and freewheel- ing application in switch ing mode converters and inverters for consumer, computer and telecommuni- cation mechanical data case: do-204ac, molded epoxy over glass body epoxy meets ul-94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes cathode end maximum ratings t a = 25 c unless otherwise specified notes: (1) peak reverse energy measured at i r = 400 ma, t j = t j max. on inductive load, t = 20 s parameter symbol byv26dgp byv26egp unit maximum repetitive peak reverse voltage v rrm 800 1000 v maximum rms voltage v rms 560 700 v maximum dc blocking voltage v dc 800 1000 v maximum average forward rectified current 0.375" (9.5 mm) lead length (see fig. 1) i f(av) 1.0 a peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 30 a non repetitive peak reverse energy (1) e rsm 10 mj operating junction and storage temperature range t j , t stg - 65 to + 175 c
www.vishay.com 2 document number 88554 10-aug-05 byv26dgp & byv26egp vishay general semiconductor electrical characteristics t a = 25 c unless otherwise specified thermal characteristics t a = 25 c unless otherwise specified notes: (1) thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, mounted on p.c.b. with 0.5 x 0.5" (12 x 12 mm) copper pads (2) thermal resistance from junction to lead at 0.375" (9 .5 mm) lead length with both leads attached to heatsink ratings and characteristics curves (t a = 25 c unless otherwise noted) parameter test condition symbol byv26dgp byv26egp unit minimum avalanche breakdown voltage at 100 a v br 900 1100 v maximum instantaneous forward voltage at 1.0 a t j = 25 c t j = 175 c v f 2.5 1.3 v maximum dc reverse current at rated dc blocking voltage t a = 25 c t a = 165 c i r 5.0 150 a max. reverse recovery time at i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 75 ns typical junction capacitance at 4.0 v, 1 mhz c j 15 pf parameter symbol byv26dgp byv26egp unit typical thermal resistance (1,2) r ja r jl 70 16 c/w figure 1. maximum forward current derating curve 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0. 8 1.0 1.2 t l = lead te m p e r a t u re lead mo u nted on heatsinks resisti v e or ind u cti v e load mo u nted on p.c.b. 0.375? (9.5mm) lead length on 0.5 x 0.5? (12 x 12mm) copper pads t a = am b ient temperat u re a v erage for w ard rectified c u rrent (a) temperat u re (c) figure 2. maximum non-repetitive peak forward surge current 1 10 100 1 10 100 10 ms, single half sine- w a v e t j = t j max. nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a)
byv26dgp & byv26egp document number 88554 10-aug-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous fo rward voltage characteristics figure 4. typical revers e leakage characteristics t j = 175 c t j = 150 c t j = 125 c t j = 25 c instan taneo u s for w a rd c u rrent (a) instantaneo u s for w ard v oltage ( v ) 0.2 0.6 1 1.4 1. 8 2.2 2.6 3 3.4 100 10 1 0.1 0.01 t j = 175 c t j = 165 c t j = 125 c t j = 25 c percent of peak re v erse v oltage (%) instantaneo u s re v erse leakage c u rrent ( a) 0204060 8 0 100 100 10 1 0.1 0.01 0.001 figure 5. typical junction capacitance figure 6. typical transient thermal impedance 0.1 1 10 100 1 10 100 t j = 25 c f = 1.0 mhz v sig = 50m v p-p re v erse v oltage ( v ) j u nction capacitance, pf t, p u lse d u ration (sec.) transient thermal impedance (c/ w ) 0.01 0.1 1 10 100 1 10 100 mo u nted on p.c.b. 0.375? (9.5mm) lead length on 0.47 x 0.47? (12 x 12mm) copper pads 0.034 (0.86) 0.028 (0.71) dia. 0.140 (3.6) 0.104 (2.6) dia. 0.230 (5.8) 0.300 (7.6) 1.0 (25.4) min. 1.0 (25.4) min. do-204ac (do-15)
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